Ni/SnO_2复合薄膜的制备与光电性能

采用旋涂法将溶胶-凝胶法制备的Ni/Sn O2凝胶在玻璃基底上镀膜,得到了Ni/Sn O2复合薄膜,探讨了镍掺杂量、煅烧温度对薄膜结构和形貌的影响。通过X射线衍射、红外光谱、扫描电子显微镜等测试手段对Ni/Sn O2复合膜的结构和形貌进行表征。结果显示,500℃下煅烧的薄膜样品的结晶度较高,粒径小,颗粒分布均匀。用紫外-可见分光光度计和四探针电阻仪对其进行光学、电学性能测试,结果显示:适量的Ni掺杂可以提高Sn O2薄膜在近紫外光区的吸收,Ni/Sn O2薄膜在近紫外光区的吸收随着Ni2+掺杂摩尔分数从5%增加到10%而逐渐减小。当Ni2+掺杂摩尔分数为6%时,Ni/Sn O2复合薄膜的导电性能最好。     

Al_2O_3薄层修饰SiN_x绝缘层的IGZO-TFTs器件的性能研究

采用原子层沉积工艺(ALD)生长均匀致密的三氧化二铝(Al2O3)薄层对氮化硅(Si Nx)绝缘层进行修饰,研究了铟镓锌氧薄膜晶体管(IGZO-TFTs)器件的性能。当Al2O3修饰层厚度为4 nm时,绝缘层-有源层界面的最大缺陷态密度相比于未修饰器件降低了17.2%,器件性能得到显著改善。场效应迁移率由1.19 cm2/(V·s)提高到7.11 cm2/(V·s),阈值电压由39.70 V降低到25.37 V,1 h正向偏压应力下的阈值电压漂移量由2.19 V减小到1.41 V。     

Laser‐Induced Self‐Assembled Nanostructures on Electron‐Transparent Substrates

Currently, one of the challenges in high‐resolution transmission electron microscopy (TEM) studies of nanomaterials is to make contamination‐free materials in a simple and time‐efficient way. Here, a method is demonstrated that combines nanosecond‐pulsed laser dewetting of thin films with a film float‐off technique to realize nanostructures (NSs) on electron‐transparent substrates in a robust and rapid manner. NSs of metal (Ag) and bimetals (AgCo, AuCo) ranging from 20 to 150 nm are synthesized on thin carbon film deposited on mica substrates. The NS/carbon system is subsequently transferred onto TEM grids by a float‐off process resulting from debonding of the carbon from mica due to their contrasting hydrophobic nature. This process enables the fabrication of different NSs on flexible and electron‐transparent substrates.     

Tuning the phase transition of ZnO thin films through lithography: an integrated bottom‐up and top‐down processing

An innovative approach towards the physico‐chemical tailoring of zinc oxide thin films is reported. The films have been deposited by liquid phase using the sol–gel method and then exposed to hard X‐rays, provided by a synchrotron storage ring, for lithography. The use of surfactant and chelating agents in the sol allows easy‐to‐pattern films made by an organic–inorganic matrix to be deposited. The exposure to hard X‐rays strongly affects the nucleation and growth of crystalline ZnO, triggering the formation of two intermediate phases before obtaining a wurtzite‐like structure. At the same time, X‐ray lithography allows for a fast patterning of the coatings enabling microfabrication for sensing and arrays technology.     

固体介质间隔层激光标准具性能的影响因素研究

针对固体介质间隔层的镀膜标准具, 以1 064 nm激光镀膜标准具为例, 首先研究了反射膜堆数对反射带宽、基底厚度以及对自由光谱区的影响:标准具的带宽随着膜层堆数增加而减小, 自由光谱区随着基板厚度的增加而减小;其次研究了基底误差对标准具中心波长定位和透过率的影响, 通过定量数值计算证明了基底误差可通过标准具的使用角度补偿;针对典型的H(LH)^m/Substrate/(HL)^mH和L(LH)^m/Substrate/(HL)^mL两个膜系结构, 研究了入射激光发散角对标准具中心波长偏移、通带半宽度、中心波长透过率和最大透过率的影响。随着激光发散角的增加, 中心波长向短波方向移动, 通带半宽度、中心波长透过率和最大透过率呈现下降的趋势, 并且第二个膜系结构的标准具性能优于第一个膜系结构的标准具。     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High‐perfomance Ce‐doped multicomponent garnet single crystalline film scintillators

We report for the first time the optimized content and excellent scintillation properties of single crystalline film (SCF) scintillators of multicomponent Gd_3–xLu_x Al_5–yGa_y O₁₂:Ce garnet compounds grown by liquid phase epitaxy (LPE) method. The Gd_1.5Lu_1.5Al_2.75Ga_2.25O₁₂:Ce and Gd₃Al_2.75–2Ga_2.25–3O₁₂:Ce SCF show the light yield (LY) comparable with that of high‐quality bulk crystal analogues of these garnets but faster scintillation decay and very low thermoluminescence in the above room temperature range. To our knowledge, these SCF possess the highest LY values ever obtained in LPE grown garnet SCF scintillators exceeding by at least 1.5–1.6 times the values previously reported for SCF scintillators.

     

Anisotropic Lithium Ion Conductivity in Single‐Ion Diblock Copolymer Electrolyte Thin Films

Well‐defined single‐ion diblock copolymers consisting of a Li‐ion conductive poly(styrenesulfonyllithium(trifluoromethylsulfonyl)imide) (PSLiTFSI) block associated with a glassy polystyrene (PS) block have been synthesized via reversible addition fragmentation chain transfer polymerization. Conductivity anisotropy ratio up to 1000 has been achieved from PS‐b‐PSLiTFSI thin films by comparing Li‐ion conductivities of out‐of‐plane (aligned) and in‐plane (antialigned) cylinder morphologies at 40 °C. Blending of PS‐b‐PSLiTFSI thin films with poly(ethylene oxide) homopolymer (hPEO) enables a substantial improvement of Li‐ion transport within aligned cylindrical domains, since hPEO, preferentially located in PSLiTFSI domains, is an excellent lithium‐solvating material. Results are also compared with unblended and blended PSLiTFSI homopolymer (hPSLiTFSI) homologues, which reveals that ionic conductivity is improved when thin films are nanostructured.

     

超薄油膜润滑的分子动力学模拟Ⅰ．刚性分子模型

分子量级超薄油膜的润滑特性与流体润滑及边界润滑的都有所不同，而且在超薄油膜中也同样存在着润滑剂的流动。因此，利用分子动力学方法模拟了超薄油膜中的压力流动，模拟中采用了刚性分子流体模型，重点研究固体壁面对流动的影响，结果表明，当油膜厚度远比流体分子“直径”大时，模拟所得速度剖面和流量均与流体力学的理论值基本一致；随着油膜厚度逐渐变薄，压力流动或动压流因受到固体壁面的阻碍作用而不断减小；当油膜厚度减小到几个分子直径量级时，两固体壁面之间的流体分子发生固化或晶体化，由此而导致压力流动消失。这可能是流体动力润滑向边界润滑转化的机理之一。由这些研究结果可见，分子动力学模拟在薄膜润滑研究中具有广阔的应用前景。     

一种考虑剪切变形的平行四边形厚/薄板通用单元

根据Timoshenko二广义位移梁理论，构造了深梁位移场的插值函数。利用斜坐标系与直角坐标系的变换关系、有限条带思想和深梁位移插值函数，构造了一种考虑剪切变形的平行四边形厚／薄板弯曲通用单元的位移(曲率、剪应变、转角、横向位移)插值函数，导出了刚度矩阵和非结点荷载等效力。并对简支阍支方板、Razzaque斜板、四边简支斜交板弯曲进行了数值计算。算例表明此单元有较好的精度，对于薄板不出现剪切闭锁，可适应于目前桥梁建设中大量采用的斜交板桥结构分析。